收藏本站
Absolute Maximum Ratings (T J = 25°C,
Inverter Part
unless otherwise specified.)
Symbol
V PN
V PN(Surge)
V CES
± I C
± I CP
Parameter
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Conditions
Applied between P - N U , N V , N W
Applied between P - N U , N V , N W
T C = 25°C, T J ?? 150°C
T C = 25°C, T J ?? 150°C, Under 1 ms Pulse
Rating
450
500
600
20
40
Unit
V
V
V
A
A
Width
P C
T J
Collector Dissipation
Operating Junction Temperature
T C = 25°C per Chip
(2nd Note 1)
62
- 40 ~ 150
W
°C
2nd Notes:
1. The maximum junction temperature rating of the power chips integrated within the Motion SPM ? 3 product is 150 ? C (at T C ? 125 ? C).
Control Part
Symbol
V CC
V BS
Parameter
Control Supply Voltage
High-Side Control Bias Voltage
Conditions
Applied between V CC(H) , V CC(L) - COM
Applied between V B(U) - V S(U) , V B(V) - V S(V) ,
Rating
20
20
Unit
V
V
V B(W) - V S(W)
V IN
Input Signal Voltage
Applied between IN (UH) , IN (VH) , IN (WH) ,
-0.3 ~ V CC + 0.3
V
IN (UL) , IN (VL) , IN (WL) - COM
V FO
I FO
V SC
Fault Output Supply Voltage
Fault Output Current
Current-Sensing Input Voltage
Applied between V FO - COM
Sink Current at V FO pin
Applied between C SC - COM
-0.3 ~ V CC + 0.3
5
-0.3 ~ V CC + 0.3
V
mA
V
Bootstrap Diode Part
Symbol
V RRM
I F
Parameter
Maximum Repetitive Reverse Voltage
Forward Current
Conditions
T C = 25°C, T J ?? 150°C
Rating
600
0.5
Unit
V
A
I FP
Forward Current (Peak)
T C = 25°C, T J ?? 150°C
Under 1 ms Pulse
2.0
A
Width
T J
Operating Junction Temperature
-40 ~ 150
°C
Total System
Symbol
V PN(PROT)
T C
T STG
V ISO
Parameter
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
V CC = V BS = 13.5 ~ 16.5 V
T J = 150°C, Non-Repetitive, < 2 ? s
-40 ? C ??? T J ? 150 ? C, See Figure 2
60 Hz, Sinusoidal, AC 1 Minute, Connect
Rating
400
-40 ~ 125
-40 ~ 125
2500
Unit
V
°C
°C
V rms
Pins to Heat Sink Plate
Thermal Resistance
Symbol
Parameter
Conditions
Min.
Typ. Max.
Unit
R th(j-c)Q
R th(j-c)F
Junction to Case Thermal Resistance
Inverter IGBT part (per 1 / 6 module)
Inverter FWDi part (per 1 / 6 module)
-
-
-
-
2.0
3.0
°C / W
°C / W
2nd Notes:
2. For the measurement point of case temperature (T C ), please refer to Figure 2.
?2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. C3
5
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FSBB20CH60SL MODULE SPM 600V 20A SPM27-CA
FSBB30CH60F IC SMART PWR MODULE SPM27-EA
FSBF10CH60BTL MODULE SPM 600V 10A 3PH SPM27-JB
FSBF10CH60BT MODULE SPM 600V 10A 3PH SPM27-JA
FSBF10CH60B MODULE SPM 600V 10A 3PH SPM27-JA
FSBF15CH60BTH MODULE SPM MOTION CTRL SPM27-JC
FSBF3CH60B MODULE SPM 600V 3A 3PH SPM27-JA
FSBF5CH60B MODULE SPM 600V 5A 3PH SPM27-JA
相关代理商/技术参数
FSBB20CH60CL 功能描述:IGBT 模块 20A, Motion-SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60CT 功能描述:IGBT 模块 600V 20A SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60CTSL 制造商:Fairchild Semiconductor Corporation 功能描述:
FSBB20CH60F 功能描述:IGBT 模块 HIGH VOLTAGE RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60F 制造商:Fairchild Semiconductor Corporation 功能描述:SMART POWER MODULE ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:SMART POWER MODULE, 3-PH, 600V, 20A PCB MOUNT
FSBB20CH60L 功能描述:IGBT 模块 Smart Power Module RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60SL 功能描述:IGBT 模块 600V/20A Smart Power RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB3 制造商:MMD 制造商全称:MMD Components 功能描述:HC-49/US Surface Mounted Crystal